High resolution X-ray diffraction study in InAs/GaSb superlattice

Abstract

In our experiment, the high-resolution X-ray diffraction rocking curves and AFM morphology of InAs/GaSb superlattices with different periods, thicknesses and soaked time are studied, which were grown by molecular beam epitaxy. We get the structural parameters of high-quality InAs/GaSb superlattices. During the growth process, the short-period InAs/GaSb superlattice has larger root mean square roughness than the long period, poor surface uniformity and weak stress release ability. The use of multi-period structure can better overcome stress and mismatch, the X-ray diffraction peak is modulated due to the change of InAs layer thickness and GaSb layer thickness. Through the position and distribution of diffraction peak, the strain characteristics of superlattice structure can be obtained, and then the regulation of energy band structure and shape of high-quality InAs/GaSb superlattice can be realized, which indicates good perspective for multi-period structure devices.