High-resolution X-ray diffraction by end of range defects in self-amorphized Ge

Abstract

In this study we detected the positive perpendicular strain ( ɛ ⊥) due to end of range (EOR) defects formed in Ge amorphized with 300 keV, 2.5 × 10 15 Ge/cm 2 at liquid nitrogen temperature by means of high-resolution X-ray diffraction. We found that, after complete solid phase epitaxial recrystallization of the amorphous layer (about 1 h at 340 °C), only 2% of the original ɛ ⊥ survives. This strain completely disappears after 270 min at 405 °C. On the other hand, after this more aggressive annealing, a thin negatively strained layer appears just below the surface. The whole set of data is discussed and compared with existing literature.