Abstract
AbstractThe interface formation between MgO dielectric layers and the atomically clean and selenium‐passivated Ge(100) surfaces has been studied using high‐resolution synchrotron radiation based photoemission spectroscopy. Atomically clean germanium was prepared by argon ion bombardment and sub‐ sequent annealing at 550 °C. MgO deposition on this surface resulted in interface oxide formation whereas no oxidation states were observed for a selenium‐treated germanium surface indicating the effectiveness of this interlayer at producing an abrupt MgO/Ge(100) interface. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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