Abstract
In this work, a nondestructive patterning method for organic semiconductors is demonstrated using nanoimprint lithography (NIL) and polymer sacrificial template. After patterning amorphous fluorinated polymer (Teflon-AF) structures by NIL, poly(3-hexylthiophene) (P3HT) thin film is spin-coated on the Teflon-AF template. The sacrificial template is then removed by a fluorinated solvent, leaving patterned P3HT structures on the substrate. P3HT lines and squares of various sizes (0.35 μm to tens of microns) are obtained by this method. This technique is also extended to fabricate passive-matrix organic light-emitting diode arrays for flat-panel display applications. By avoiding oxygen RIE on organic semiconductor, this patterning technique is nondestructive to organic semiconductors. Moreover, this method is capable of making high-resolution (deep submicron) organic semiconductor patterns to potentially enable nanoscale organic electronic devices with high performance or organic integrated systems with high integration density.
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