Abstract
Calixarene is a promising high-resolution negative electron-beam resist having a resolution of the order of 10nm because of its low molecular weight. We have made a purified calixarene resist containing metal contaminants whose concentrations are measured in parts per billion and which therefore do not degrade the performance of silicon devices. The purity of the calixarene itself was also improved and we obtained high-purity calix[6]arene and high-purity calix[7]arene, in both of which contain the main component is more than 95% of all the calixarene present. The resolution of both purified calixarene resists is almost same as that the nonpurified calixarene, but the sensitivity of calix[7]arene is higher than that of calix[6]arene because its molecular weight is higher.
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