Abstract
During the course of orthorhombic βFeSi 2 heteroepitaxy on Si substrates under molecular beam epitaxy conditions, several ultra-thin pseudomorphic metastable silicide layers have been observed, e.g. a cubic CsCl phase, a cubic CaF 2 phase and tetragonal αFeSi 2, recently and surprisingly stabilized at low temperature. We report here on their phase transition towards the stable βFeSi 2 phase via two main kinetic paths, clearly demonstrated for the first time thanks to high-resolution electron microscopy measurements and image simulation. Our results emphasize the relevant influence of the local morphology at the interface in favoring one or another kinetic path, although the common general behavior of the interface development is well reflected in the sequential formation on Si substrate of: epitaxially strained FeSi 2 layer; relaxed FeSi 2 layer mediated by dislocation formation; stable βFeSi 2.
Published Version
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