Abstract
Results are presented of high resolution electron microscope (HREM) investigations of atomic structure of semiconductor epitaxial systems. For the GaAs/AlAs epitaxial systems the different atomic scale roughness is detected. This may result in morphological instability of a growing surface for the given system. For InGasAs/InP and InSb/GaAs systems the data on structure and origin of threading dislocations are presented. Examples of laterally defined semiconductor microstructure fabrication on the basis of III-V epitaxial structures to study their quantum properties are presented. The structure transformation of a Frank partial dislocation core in Si during electron irradiation in HREM is investigated and the atomic model of irradiation induced interstitial agglomerates is discussed. [Russian Text Ignored].
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