Abstract
High-resolution electron microscopy is used to study interfaces between solids with varying degree of atomic ordering. Applying a recently developed technique the structure of amorphous germanium near (111) oriented crystalline silicon is described by its two-dimensional distribution function ρ(x,y) of atoms, and properties of ρ(x,y) are extracted from experimental images. Using extensive image simulations it is further shown that the technique is suitable to measure composition profiles at coherent heterointerfaces.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.