Abstract
Pulsed laser induced epitaxy has been used to produce graded heteroepitaxial SixGe(1−x) alloy layers on Si(100) wafers by melting an a-Ge film, previously grown by laser induced chemical vapor deposition, together with part of the wafer itself. High resolution electron microscopy and x-ray photoelectron spectroscopy analyses of SixGe(1−x) alloys suggest the formation of two sublayers; a strained one starting from the substrate up to Ge concentration of about 10–15 at. % and a partially relaxed one on top. The complete crystallization of the alloy without the formation of precipitates and with low threading dislocation density, proves that the combination of these laser-induced techniques represents a new and alternative process for the attainment of high quality SixGe(1−x) heterostructures.
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