Abstract
The results of studies of nominally undoped epitaxial p-GaSb layers grown by metal–organic vapor-phase epitaxy at a ratio TMSb/TEGa in the range from 1 to 50 are reported. At the ratio TMSb/TEGa = 50, GaSb epitaxial layers, whose resistivity is 400 Ω cm, are produced. It is shown that, for such layers, the crystal quality assessed by several methods remains comparable to the quality of n-GaSb substrates used for the growth of nominally undoped GaSb layers.
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