Abstract
Here, we present results of a systematic investigation of electrical and magnetic properties of Co–Fe–Hf–O thin films, which were deposited on Si(1 0 0) substrates by the oxygen reactive RF-sputtering method, at varying partial pressure of oxygen from 0 to 13%. Among the compositions investigated, we have achieved the optimal Co 19.35Fe 53.28Hf 7.92O 19.35 film with desired properties of high saturation magnetization, 4 πM s ∼ 19.86 kG, low coercivity, H c ∼ 1.5 Oe, high anisotropy field H k ∼ 84 Oe, and high electrical resistivity ρ ∼ 3569 μΩ cm. This film also exhibits a stable constant frequency response of the magnetic permeability up to 3 GHz, and reaches a maximum at the ferromagnetic resonant frequency of 4.024 GHz. The excellent properties of this film make it ideal for uses in high-frequency applications of micromagnetic devices. The dependence of the electrical and magnetic properties of Co–Fe–Hf–O film on the oxygen concentration can be understood from the microstructural evolution of this material.
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call