Abstract
Quantum cascade detectors in the AlGaAs/GaAs material system have been grown by solid source molecular beam epitaxy. The growth direction of the active region is chosen carefully due to the existence of a doping concentration grade along the epilayers. For a 200 × 200 µm2 square mesa device, the detector operates above 90 K with a peak detection wavelength of 8.81 µm, and exhibits a high R0A about 4.5 × 106 Ω cm2 and a high Johnson noise limited detectivity D*J about 3.9 × 1010 Jones at this temperature.
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