Abstract
A strain-compensated InP-based InGaAs/InAlAs quantum cascade detector grown by solid source molecular beam epitaxy is demonstrated. The device operates at 4.3 μm up to room temperature (300 K) with a responsivity of 1.27 mA/W and a Johnson noise limited detectivity of 1.02 × 107 cm·Hz1/2/W. At 80 K, the responsivity and detectivity are 14.55 mA/W and 1.26 × 1010 cm·Hz1/2/W, respectively. According to the response range, this detector is much suitable for greenhouse gas detection.
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