Abstract
AbstractA hydrogenated amorphous silicon (a‐Si:H) thin‐film transistor (TFT) gate driver with negative bias stress on precharging node for noise sharing with high‐reliability 10.7‐in. automotive display has been proposed. The proposed circuit is composed of precharging block, pull‐up and pull‐down block, and noise‐free block. The precharging block not only starts up the gate driver but also reduces noise with 33% duty cycle. Duplicate output signals are responsible for turning on next stage to decrease the loading of output of gate line. Moreover, negative bias voltage recovering of TFTs could be created by setting another lower voltage source to lower the threshold voltage degradation of TFTs. According to lifetime test results, the proposed gate driver of 708 stages passes the extreme temperature range test (90°C and −40°C) for simulation and −40°C for measurement and remains stable over 800 h at 90°C test. Finally, this design is successfully demonstrated in a 10.7‐in. HD (1280 × RGB × 720) TFT‐LCD panel.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
