Abstract
We report on high-reliability GaAs/AlGaAs multiquantum well (MQW) lasers grown at a low temperature (375 °C) by molecular beam epitaxy (MBE). Typically, a threshold current (Ith) of 26 mA and a differential quantum efficiency of 62% were obtained during a continuous wave (cw) operation at room temperature. During the life test, a stable operation was observed beyond 5000 h under a 20-mW cw operation at 70 °C. We also observed an improvement of laser characteristics in low-temperature-grown MQW lasers during a cw operation at room temperature. The threshold current of our MQW lasers was reduced from 26 to 18 mA, and this suggests that the point defects in the low-temperature-grown MQW laser were decreased.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
