Abstract

(1−x)BaTiO3-xBi(Mg0.5Zr0.5)O3 (BT-BMZ, x=0–0.1) ceramics were fabricated via a conventional solid-state reaction method. The phase transition, microstructure and dielectric performances of the composites were investigated. It is intriguing that the relative permittivity (εr) increased rapidly (>105) at phase transition temperature by adding small amounts of BMZ (x=0.01). With further increasing BMZ content (0.06≤x≤0.1), εr was deteriorated slightly, however, the temperature independence of permittivity was significantly improved (Δε/ε200°C<−15%) over a wide temperature range of 200°C–400°C at 10kHz. Additionally, the high relative permittivity (~3000–7000) along with a low dielectric loss (<9%) were also obtained, comparisons of dielectric properties with other materials proposed for high-temperature capacitor applications indicated that these compositions are promising dielectric materials for high temperature capacitor. This work can provide a roadmap to obtain a temperature stable dielectric ceramic with high relative permittivity and low dielectric loss.

Full Text
Published version (Free)

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call