Abstract
This letter describes the first successful attempt at synthesizing diamond by chemical vapor deposition with the use of a dc plasma jet. A plasma jet, formed by the dc arc discharge of CH4 diluted with H2, was sprayed onto a water-cooled substrate. The growth rate of the diamond film was 80 μm/h. The crystallinity measures well in terms of x-ray diffraction and Raman spectroscopy. The quenching effect of the thermal plasma is discussed in relation to the high growth rate obtained.
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