Effects of electrode arrangement and pressure on synthesis of diamond films by arc discharge plasma jet chemical vapor deposition

Abstract

Abstract The setup and deposition conditions of electrode arrangement and pressure have been studied to synthesize diamond films at high growth rate on wide area efficiently by arc discharge plasma jet chemical vapor deposition. An apparatus has been used in which four plasma torches, one is used for cathode and the others for divided anodes, are arranged and the positions of these torches are changeable. Growth rate, deposition area and thickness of diamond films have increased with changing the electrode arrangements without improvement of thickness variation. Maximum growth rate of our apparatus has occurred at the pressure of 6.7 kPa and diamond films that have less variations of quality and surface roughness have been synthesized at lower pressure during deposition. Moreover, a high conversion rate, which is the ratio of carbon atoms that form diamond in supplied methane gas, of 16% has been obtained at the pressure of 6.7 kPa and methane concentration of 2%.