Abstract

The article describes the high-rate deposition of CuOx films by magnetron sputtering system operated in the metallic mode and enhanced by radiofrequency inductively coupled plasma (RF-ICP) source. The role of the RF-ICP assistance on modes of Cu target sputtering in Ar + O2 atmosphere was investigated by determination of hysteresis loops and using optical emission spectroscopy. Then, the CuOx films were deposited on the unmoved substrates depending on their position in the vacuum chamber. The deposition conditions to obtain the CuOx films with some phase and elemental composition were determined. The comparison of the deposition rates of the CuO films is done for the deposition by magnetron sputtering in the metallic mode and using conventional reactive sputtering.

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