Abstract
High-quality ZnSe/GaAs superlattices were grown by migration-enhanced epitaxy (MEE) and characterized using X-ray diffraction, electron microscopy and photoluminescence. The streaky reflection high-energy electron diffraction (RHEED) pattern and strong, persistent RHEED oscillations observed during the MEE growth of the superlattices indicate a smooth growing surface. The sharp satellite peaks observed clearly in the double-crystal X-ray diffraction rocking curve of a 21-period ZnSe/GaAs superlattice confirm the excellent crystalline and interfacial quality of the superlattice. Cross-section transmission electron microscopy (TEM) shows flat, abrupt heterointerfaces. Superlattice photoluminescence spectra show that both photo-excited electrons and holes are confined in GaAs wells; also seen are the sharp excitonic features from the coherently strained ZnSe cap and barrier layers of the superlattice.
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