Abstract
We report the YBa 2Cu 3O 7−x/SrTiO 3 (YBCO/STO) bilayer structure to prevent the deterioration of superconductivity of YBCO channel layer having a grain-boundary junction in superconducting field effect transistor. Two types of method were used, such as the 20 nm-thick STO capping layer and the 100 nm-thick PBa 2Cu 3O 7−x buffer layer deposition. Transition temperature of 50 nm-thick ultrathin YBCO channel layer on STO bi-crystal substrate deposited by these method increased to 80 K owing to the sufficient oxidation and the relaxation of film stress in YBCO channel layer.
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