Abstract
SnO2/Ag/SnO2 tri-layer films were prepared on quartz glass substrates by RF magnetron sputtering of SnO2 and DC magnetron sputtering of Ag. The influence of Ag layer thickness on electrical and optical properties of the tri-layer film was investigated. Several analytical tools such as Hall measurements, four-point probe, field emission scanning electron microscopy (FE-SEM) and ultraviolet–visible–near infrared (UV–vis–NIR) spectrophotometer were used to explore the causes of the changes in optoelectronic properties and surface micrographs. The highest value of figure of merit is 1.6×10−2Ω−1 for the SnO2 (25nm)/Ag (5nm)/SnO2 (25nm) tri-layer film, the resistivity is 4.8×10−5 Ωcm, and the sheet resistance is 9.61Ω/sq, while the average transmittance is above 83% in the visible light region (400–800nm).
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