Abstract
Nanoselective area growth (NSAG) of thick InGaN nanopyramid and nanostripe arrays was demonstrated using metal organic chemical vapor deposition. SiO2 nanopattern masks were fabricated using a simple and industry friendly e‐beam lithography process. One hundred nanometer thick InGaN is grown with perfect selectivity over patterned GaN templates. InGaN nanostructures are homogenously pyramidal in shape, are mostly free from intrinsic material defects, and show six smooth semipolar facets. Catholuminescence emission peaks from the nanostructures are stronger than those from planar InGaN, which is due to improvement in crystal quality. The emission peaks from nanostructures are considerably redshifted from 397 to 425 nm, confirming increase in In incorporation in the nanostructures from 7 to 9% indium in InGaN. The ability to incorporate more indium depending on the geometry of the patterns and to grow selectively defect‐free thick InGaN nanostructures via a simple patterning process offers a new route to develop monolithic InGaN‐based high efficiency solar cells.
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