Abstract
We have developed a low-temperature fabrication process (/spl les/ 200/spl deg/C for high-quality polycrystalline Si thin-film transistors (poly-Si TFTs) on flexible stainless-steel foils. The fabrication processes is realized through sputter deposition of thin films, including active-Si and gate-SiO/sub 2/ films, crystallization of Si films by KrF excimer laser irradiation, and inductively coupled plasma hydrogenation. High-quality n- and p-channel poly-Si TFTs are successfully fabricated without suffering from problems of substrate bending, film ablation, or cracking in films. The resulting n- and p-channel poly-Si TFTs showed mobilities of 106 and 122 cm/sup 2//V/spl middot/s, respectively. This paper describes the deposition and properties of the sputtered Si films and the fabrication process and electrical characteristics of the poly-SiTFTs.
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