Year-end Sale % OFF 
Abstract
High mobility polycrystalline Si thin-film transistors (poly-Si TFTs) are firstly fabricated on flexible stainless-steel substrates 100 /spl mu/m thick through low-temperature processes where both active Si and gate SiO/sub 2/ films are deposited by glow-discharge sputtering and the Si films are crystallized by KrF excimer laser irradiation. The gate SiO/sub 2/ films are sputter-deposited in oxygen atmosphere from the SiO/sub 2/ target. Resulting poly-Si TFTs show excellent characteristics of mobility of 106 cm/sup 2//V/spl middot/s and drain current on-off ratio of as high as 1/spl times/10/sup 6/. Thus, the poly-Si TFTs are very promising for realizing novel flat panel displays of lightweight and rugged LCDs and LEDs.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
