Abstract
A high-quality planar two-dimensional p-i-n light emitting diode in an entirely undoped GaAs/AlGaAs quantum well has been fabricated by using conventional lithography process. With twin gate design, two-dimensional electron and hold gases can be placed closely on demand. The electroluminescence of the device exhibit high stability and clear transition peaks so it is promising for applications on electrically-driven single photon sources.
Highlights
Most of the III-V optoelectronic devices rely on junctions formed by stacks of epilayers, where the electrical current flows across the junction vertical to the sample surface
A high-quality planar two-dimensional p-i-n light emitting diode in an entirely undoped GaAs/AlGaAs quantum well has been fabricated by using conventional lithography process
The electroluminescence of the device exhibit high stability and clear transition peaks so it is promising for applications on electrically-driven single photon sources
Summary
Most of the III-V optoelectronic devices rely on junctions formed by stacks of epilayers, where the electrical current flows across the junction vertical to the sample surface. The authors in [2,12,13] fabricated lateral p-n junctions by molecular beam epitaxy (MBE) growth on a patterned GaAs substrate by employing the amphoteric nature of the Si dopants to simultaneously form 2DEG on the (001) planes and 2DHG on (113)A planes. Introducing impurities affects luminescence efficiency by presenting non-radiative recombination channels It will affect further application for single-photon devices. We demonstrate a novel structure utilizing induced 2DEG and 2DHG channels in an undoped GaAs quantum well to form the lateral p-i-n junction. The device has a planar structure and can be fabricated by conventional metallization and lithography processes
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