Abstract
In this work we present the results on silicon dioxide films grown by the direct plasma enhanced chemical vapor deposition (DPECVD) technique at low temperature (< 400°C). The films were obtained by decomposition of appropriate mixtures of silane and nitrous oxide under different deposition conditions and their optical and structural properties were analyzed through Fourier transform infrared spectroscopy and ellipsometry. The results demonstrate the feasibility of obtaining stoichiometric silicon dioxide thin films by DPECVD without traces (within the detection limits of the FTIR analysis) of OH, NH or SiH bonds, provided suitable deposition conditions are utilized. In particular we show that DPECVD combined with small silane flow and small deposition pressure is as effective as the techniques already reported in the literature, such as helium dilution or remote plasma CVD, in promoting the growth of stoichiometric films structurally similar to thermally grown silicon dioxide and having the added advantage of simplicity.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
