High quality interfaces of InAs-on-insulator field-effect transistors with ZrO2 gate dielectrics

Abstract

Interface quality of InAs-on-insulator (XOI) field-effect transistors (FETs) with a ZrO2 gate dielectric is examined as a function of various chemical treatments. With a forming gas anneal, InAs XOI FETs exhibit a low subthreshold swing of ∼72 mV/dec with an interface trap density of ∼1.5 × 1012 states/cm2 eV—both of which are comparable to the best reported epitaxially grown III-V devices on III-V substrates. Importantly, the results indicate that the surface properties of InAs are preserved during the layer transfer process, thereby, enabling the realization of high performance III-V FETs on Si substrates using the XOI configuration.