Abstract
High quality SiO2 films have been deposited by the plasma enhanced chemical vapor deposition technique using SiF4 and N2O. It has been determined that a small amount of hydrogen is needed to reduce the amount of residual fluorine atoms in the oxide improving the structural and electrical properties of the film. Using SiH4 as a source of hydrogen instead of H2 results in a high deposition rate increasing from 7 to more than 500 A/min depending on the total content of SiH4. However, for the high deposition rates studied, hydrogen related impurities start to appear and some degradation of the electrical characteristics of the films are observed.
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Schedule a callMore From: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
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