Abstract
HfO 2 films have been grown by an atomic layer deposition method using a high-purity tetrakis(ethylmethylamido)hafnium (TEMAH). TEMAH, which has been used as a source material for HfO 2 film formation, is likely to include zirconium (Zr) or titanium (Ti) atoms as impurities in the manufacturing process, and further purification was difficult. We succeeded in synthesizing a high-purity TEMAH with a reduced Zr concentration of impurities. The electrical properties of HfO 2 films were investigated, and the breakdown voltage and leakage current were improved by decreasing Zr impurities.
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