Abstract
High-quality silicon dioxide films for MOSFET gates are succesfully obtained by oxygen-argon sputter deposition at low temperature (200°C). This paper presents the excellent effects of mixing oxygen with the argon sputtering gas on the bulk and MOS interface properties of silicon dioxide films as well as related mechanisms. Oxygen mixing considerably improves the bulk properties of resistivity and breakdown field over those of argon-only sputter-deposited films (from 10 12 to > 10 15 Ω cm and from 2 to > 8 MV/cm, respectively). The field effect mobility is also improved from 250 to 700 cm 2/V.s. These values obtained by the oxygen mixing are almost the same as for high temperature thermal dioxide films (1000°C). These improvements are suggested to be a result of enhancement of surface migration of deposited particles, and/or protection by chemisorbed oxygen surface layers of the silicon substrate and the film surface from direct bombardment by high-speed argon particles.
Published Version
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