High quality GaN-based Schottky barrier diodes

Abstract

We report the fabrication of GaN-based Schottky barrier diodes with multi-MgxNy/GaN buffer. Compared to conventional devices with a low-temperature GaN buffer, we achieved a six orders of magnitude smaller leakage current. It was also found that effective Schottky barrier height is larger for the proposed device due to the reduction in surface defect density by using the multi-MgxNy/GaN buffer.