Abstract
Lead zirconate titanate (PZT) based ferroelectric capacitor using lead titanate (PT) as seeding layers has been prepared on silicon wafer by an improved sol-gel method. The novel ferroelectric capacitor has high dielectric constant of about 1200, ultralow leakage current density of 0.1nA/cm 2 , high remanent polarization of 20 w C/cm 2 at coercive field of about 30kV/cm, and almost fatigue free properties. The capacitor structure can be valuable for FeRAM applications.
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