Abstract
We study a silicon-based PbTiO3/Pb(Zr0.53Ti0.47)O3/PbTiO3 capacitor,prepared by an improved sol-gel method. The ferroelectriccapacitor has a high remanent polarization of 15 µC/cm2 at a coercive fieldof about 30 kV/cm, an ultra-low leakage current density of 0.1 nA/cm2, and almostfatigue free properties. It can be used as a promising candidate forferroelectric memory devices.
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