Abstract
InN growth on 2-inch sapphire (0001) with thickness up to 5 μm was demonstrated by radio-frequency plasma-assisted molecular beam epitaxy (rf-MBE). The surfaces of the 2-inch samples were mirror-like and atomic growth steps were observed in large areas. The room temperature Hall mobility crossing the 2-inch InN wafers ranged from 900 to 1100 cm2/V s, with electron concentration of the order of 1018/cm3. The optical bandgap of the InN layers with electron concentration of the order of 1018/cm3 was 0.70–0.74 eV measured by optical transmission/reflection spectroscopy. (© 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
