High-quality and large-area 3C–SiC growth on 6H–SiC(0 0 0 1) seed crystal with top-seeded solution method

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We have grown high-quality and large-area (18×18mm2) 3C–SiC crystals on 6H–SiC seed crystals heteroepitaxially using a top-seeded solution method. The key technique here is the intentional inducement of a stacking error just at the surface of the seed crystal and crystal growth under conditions where the 3C–SiC is thermodynamically stable. The solution method developed here can be used to grow larger-area 3C–SiC crystals using 6H–SiC seed crystals 2–4in. in diameter grown by a sublimation method. In cross-sectional transmission electron microscopy images, a transition area composed of twinned 3C–SiC variants was observed just above the boundary where the polytype changed from 6H–SiC to 3C–SiC. This transition area can be explained by lateral growth and collision of different variant 3C–SiC crystals.