Abstract
We systematically investigated metalorganic vapor phase epitaxy (MOVPE) growths of AlN layers with trimethylgallium (TMGa) supply on sapphire substrates at 1100–1250 °C. We found that Ga incorporations into the AlN layers contributed to smooth surfaces covered with step terraces at the early stage of the Al(Ga)N growth. In addition, a GaN mole fraction leading to the smooth surfaces was found to be around 2–3% at the beginning of growth. The Ga supply during the AlN layer growth at 1150 °C provided very smooth Al0.99Ga0.01N layers on sapphire substrates.
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