Abstract
AbstractIn order to grow high‐quality aluminum‐doped zinc oxide films (AZO), the chemical coprecipitation method was adopted to synthesize ultra‐fine AZO powder, in which Al2O3 was more easily and more uniformly doped in ZnO compared to the traditional mechanical grinding method. X‐ray diffraction results showed that Al atoms have replaced the position of Zn atoms in ZnO lattice without forming the Al2O3 phase. AZO thin films were deposited at a substrate temperature of 200 °C by using pulsed laser deposition. The resistivity of the AZO films was 1.7 × 10‐4 Ω cm and the light transmittance in the visible region exceeded 85%. The properties of these films commendably meet the requirements of solar cell devices. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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