Year-end Sale % OFF 
Abstract
Atmospheric pressure metalorganic vapour phase epitaxy (MOVPE) has been used to prepare high purity AlGaAs from methyl metalorganic precursors and arsine. A low background concentration for carbon and oxygen was realized using a growth temperature of 600°C and processing of the metalorganic precursors using reactive metals dissolved in gallium. Comparisons have been made with unprocessed alkyl reagents using 10 K photoluminescence. A reduction of both carbon and oxygen through purification suggests alkoxide contamination is suppressed by this technique. MOVPE growth using oxygen gettering for all precursors has been applied to visible AlGaAs laser diodes. A 712 nm double quantum well design operating CW resulted in a maximum output power of 176mW/facet from an uncoated laser device with a 400 μ m×100 μ m oxide defined stripe.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
