Abstract
Homoepitaxial growth of high-purity and thick 4H- and 6H-SiC(0 0 0 1) epilayers by an original hot-wall chemical vapor deposition system has been investigated. Under typical growth conditions, the growth rate showed a maximum of 6.7 μm/h at a pressure of 80 Torr, which may be explained by pressure-dependent gas heating. Low-temperature photoluminescence spectra of epilayers were dominated by free exciton peaks. A very low background doping level of 1–2×10 13 cm −3 (n-type) and low trap concentration in the mid 10 11 cm −3 range have been achieved.
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