Abstract
Fast homoepitaxial growth of 4H-SiC has been carried out on 8° off-axis (0 0 0 1) Si substrates by horizontal hot-wall chemical vapor deposition (CVD) at 1650 °C. Growth at low pressure, by which gas-phase Si condensation can be minimized, has made it possible to obtain mirror-like surface at high growth rate up to 50 μm/h. Epilayers grown on chemical mechanically polished (CMP) substrates show much better surface morphology than those on as-received substrates. The basal-plane dislocation (BPD) density can be decreased by fast epitaxy on CMP substrates, and the minimum BPD density obtained in this study is 22 cm −2. The concentration of Z 1/2 and EH 6/7 centers is in the low 10 12 cm −3 range even at high growth rate of 50 μm/h. In photoluminescence (PL), free exciton peaks are remarkably dominant, and impurity-related peaks and L 1 peak are hardly observed.
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