High-pressure x-ray absorption and diffraction study of the self-doped superconductor EuFBiS2

Abstract

The ${\mathrm{BiS}}_{2}$-based layered materials are characterized by a highly susceptible physical state, revealing a large response to external conditions. A particular case is the ${\mathrm{EuFBiS}}_{2}$ compound, showing a superconducting transition temperature ${T}_{c}\ensuremath{\sim}0.3$ K at ambient pressure. Upon increasing external pressure, ${T}_{c}$ goes through a large amplification, accompanied by a structural phase transition (SPT) from tetragonal to monoclinic symmetry. Here, we use a combination of Eu ${\phantom{\rule{4pt}{0ex}}L}_{3}$ - edge x-ray absorption spectroscopy and synchrotron x-ray diffraction to unveil the evolution of the Eu valence and lattice symmetry under high pressure. We find that the average Eu valence increases gradually with pressure, exhibiting a pressure plateau near the SPT, at which the ${T}_{c}$ increases sharply. Since in ${\mathrm{EuFBiS}}_{2}$ the charge carriers are introduced via self-doping induced by the mixed valence of the Eu ions, our findings clearly indicate that the role of the charge doping is marginal in the ${T}_{c}$ enhancement. On the other hand, the structural distortions, taking place at the SPT, play a central role in enhancing the superconducting properties of the ${\mathrm{EuFBiS}}_{2}$ system.