Abstract
The title compound was prepared using a pressure of 8 GPa and a temperature of 1000 °C followed by slow cooling under pressure. After releasing pressure the sample was examined by x-ray powder diffraction, metallographical and EDX analysis. In the sample after the preparation, the compound EuGa2–xSi4+x is found to coexist with EuGa4–xSix (EuGa4 type) and Si. EuGa2–xSi4+x is the second representative of the EuGa2Ge4 structure type [1] and crystallizes in space group Cmcm with a = 4.348(1) A, b = 10.457(1) A and c = 11.938(2) A (V= 542.8 A). Gallium and germanium build up a three-dimensional network of four-bonded atoms with europium located in large voids. By replacing germanium with silicon the volume decreases by about 12 %. This change in volume is pronouncedly anisotropic; the length of the a axis increases by 4.6 % whereas the b and c axis shorten by 7.2 % and 9.3 %, respectively. Due to a partial replacement of gallium by silicon, the electron balance can be written as Eu[Ga(3b)]0.7[Si(4b)]5.3·1.3e. Thus, we expect metal-type conductivity. Magnetic susceptibility, electrical resistance and thermoelectric properties of the silicon compound are currently under investigation.
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