Abstract

Recent investigation of the semiconductors GaP, GaN, InSb, SnTe and Si and the superconductors NbN and MoN synthesized, crystallized and annealed at high gaseous pressure and high temperature up to 20 kbar and 2000°C are presented. The application of high pressure methods to improve electrical or optical parameters and quality of crystals as well as for studies of crystal defects is discussed.

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