High-pressure structural stability and bandgap engineering of layered tin disulfide

Abstract

Two-dimensional layered metal dichalcogenides have attracted extensive attention because of their diverse physical properties and potential applications in electronics and optoelectronics. As an eco-friendly and earth abundant semiconductor, SnS2 displays limited optoelectronic applications due to its large and indirect bandgap. Pressure is a powerful tool to tune crystal structures and physical properties of materials. Here, we systematically investigate the structural stability and optical properties of 4H-SnS2 under high pressure. The crystal structure of 4H-SnS2 is stable up to 56 GPa without structural transition and layer sliding. Continuous lattice contraction is accompanied by gradual bandgap narrowing, which is reversible after releasing pressure. The continuous and reversible modulation of the crystal structure and bandgap on 4H-SnS2 suggest promising optoelectronic applications in the range of visible light based on two-dimensional layered metal dichalcogenides.