Abstract
Se-S-As ternary polycrystalline compounds were prepared at a synthesis temperature of 900 K under a pressure of 4 GPa. The samples were analyzed by XRD, SEM and EDS. The experimental results showed that the high-pressure conditions promoted the reaction between the ternary compound Se-S-As, and the prepared samples had fairly crystallinity with the sample grain diameter around 50 μm. The results of Se-S-As elemental composition analysis showed that the atomic ratio Se:S: As was close to 8:5:8.
Highlights
Chalcogenides, as semiconducting materials, are often in the form of glass ceramics, which are widely used in infrared optical materials, thin film optical storage materials and photonic crystal fiber materials [1-3]
It can be seen that the sample SeSAs compound prepared by high temperature and high pressure method has about 37.13:23.92:38.95 arsenic-sulfur-selenium atoms, and the content of sulfur atoms has a large reduction compared with the initial content, which is mainly caused by the very low melting and boiling points of sulfur and the relatively high preparation temperature
Due to the rapid temperature rise and under conditions such as very high pressure and short preparation time, a considerable amount of sulfur is still retained within the ternary crystal compound
Summary
Chalcogenides, as semiconducting materials, are often in the form of glass ceramics, which are widely used in infrared optical materials, thin film optical storage materials and photonic crystal fiber materials [1-3]. A high-pressure synthesis method with a preparation pressure of 4 GPa at a stoichiometric ratio of 1:1:1 for arsenic-sulfur-selenium was used to explore a new route for the preparation of the ternary compound Se-S-As and its microstructural characteristics.
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