Abstract
High-pressure H 2O vapor heating was applied to oxidation of SiO x ( x<2) films formed on silicon substrates at room temperature by thermal evaporation in vacuum, in order to improve properties of SiO x /Si interfaces for passivation of silicon surfaces. The SiO x films were oxidized with an activation energy of 0.035 eV. The spin density of unpaired electron decreased from 2.3×10 17 to 1.4×10 15 cm −3 by the heat treatment at 260°C with 2.1×106 Pa H 2O vapor for 3 h. The surface recombination velocity for excess carriers decreased from 405 (as deposited SiO x film) to 13 cm/s. There was no change in the surface recombination velocity after keeping the samples at an atmospheric pressure and at room temperature for 8000 h. Suitable passivation of silicon surface was achieved by simple heating with high-pressure H 2O vapor at low temperature.
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