Abstract
This letter shows a high-power, high-efficiency, wideband Class-E RF power amplifier designed upon the load admittance synthesis concept and built using an uncomplicated low-loss load network with a low loss wideband admittance transformer as the main component. It uses a power Silicon LDMOS transistor to provide up to 145 W at 28 V peak power, up to 86% drain efficiency over 35% fractional bandwidth (from 85 to 120 MHz) and 15.6 dB gain at peak power without any adjustments. These are clear performance advantages over previous published works and commercially available amplifiers at a similar frequency band and power level. The amplifier applications include FM broadcast, aeronautical communications, nuclear, MRI, heating or RF power stage for Envelope Elimination and Restoration transmitters.
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