Abstract
An integrated passive device (IPD) supporting both RF and baseband impedance matching is proposed that is directly suitable for high power, multiband amplifier applications. The impedance matching method and design techniques are discussed. As proof-of-concept, we present an LDMOS Doherty power amplifier (PA) with 400 W peak power using the proposed IPD to demonstrate 20% fractional RF bandwidth with low baseband impedance. Measurements of the Doherty PA with digital pre-distortion system indicate that the amplifier achieves over 40% drain efficiency at average P out of 48.5 dBm with over 15 dB of gain during concurrent transmission of 3GPP Band 3 & Band 66 from 1.805–2.2 GHz while meeting ACPR of −53 dBc. The results represent over 2 times improvement of instantaneous bandwidth capability over prior work and enables for the first time 395 MHz instantaneous bandwidth capability for high power downlink cellular infrastructure communication systems.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
