Abstract
An integrated passive device (IPD) technology has been developed for wireless basestations applications. The technology features 6-mil GaAs substrates, airbridges for MIM capacitors, thick gold metallization for high Q inductors, and through-wafer vias for ultra-low-loss RF grounding. Extensive EM simulations were used in the evaluation and design of the inductors, capacitors, through-wafer vias, and the bond wires connecting the LDMOS die and the IPD. 900 MHz and 2.7 GHz Class AB LDMOS power amplifiers (PAs) using IPD output impedance matching networks, and a 900 MHz Class F PA using an IPD harmonic termination circuit, have been designed, fabricated, and tested. All systems show excellent RF performances.
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